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APT50GP60B APT50GP60S
600V
POWER MOS 7 IGBT
TO-247
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
D3PAK
G
C
C
E
G
E
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 200 kHz operation @ 400V, 26A * 100 kHz operation @ 400V, 41A * SSOA rated
G E C
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT50GP60B_S UNIT
600 20 30
@ TC = 25C Volts
100 72 190 190A@600V 625 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 500
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2
I CES I GES
A nA
2-2004 050-7434 Rev B
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GP60B_S
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
4 5
MIN
TYP
MAX
UNIT
5700 465 30 7.5 165 40 50 190 19 36 83 60 465 837 637 19 36 116 86 465 1261 1058
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A R G = 5
5
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.20 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7434
Rev B
2-2004
TYPICAL PERFORMANCE CURVES
70 60 50 40 30 20 TC=25C TC=-55C 10 TC=125C 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 100
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT50GP60B_S
70 60 50 40 30 20 10 0 TC=25C TC=125C TC=-55C
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 VCE=300V 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE=480V
IC = 50A TJ = 25C
IC, COLLECTOR CURRENT (A)
80
VCE=120V
60
TJ = -55C
40
TJ = 25C TJ = 125C
20
0
0
2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 IC = 50A 2 1.5 1 0.5 0 IC = 25A
3 2.5 2 IC = 25A 1.5 IC =100A IC = 50A
IC =100A
1
0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
180 160 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
2-2004 050-7434 Rev B
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
TYPICAL PERFORMANCE CURVES
40
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
APT50GP60B_S
140 120 100 80 60 40 20 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C VGE =15V,TJ=125C VGE =10V,TJ=125C
35 VGE= 10V 30 25 20 15 10 05 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H VGE= 15V
VGE =10V,TJ=25C
0 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 90 80
tr, RISE TIME (ns) tf, FALL TIME (ns)
TJ = 25 or 125C,VGE = 10V
20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120
TJ = 125C, VGE = 10V or 15V
100 80 60
TJ = 25C, VGE = 10V or 15V
70 60 50 40 30 20 10
TJ = 25 or 125C,VGE = 15V
40
20
RG =5, L = 100H, VCE = 400V
0 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
0
RG =5, L = 100H, VCE = 400V
20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 3000 2500 2000 1500 1000 500
T = 25C, VGE = 10V or 15V J
VCE = 400V L = 100 H RG = 5
3500 3000
TJ = 125C, VGE = 10V or 15V
TJ =125C, VGE=15V
TJ =125C,VGE=10V
2500 2000 1500 1000 500
TJ = 25C, VGE=10V TJ = 25C, VGE=15V
0 10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
0 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
5000
3500 3000 2500 2000 1500 1000 500
4000 3000
Eon2 100A Eoff 100A
Eon2 100A
Eoff 100A
2-2004
2000 Eon2 50A 1000 0 0 Eon2 25A Eoff 50A Eoff 25A
Eon2 50A Eon2 25A
Eoff 50A Eoff 25A
Rev B
050-7434
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0 -50
TYPICAL PERFORMANCE CURVES
10,000 5,000
IC, COLLECTOR CURRENT (A)
APT50GP60B_S
Cies 200 180 160 140 120 100 180 160 140 120
C, CAPACITANCE ( F)
1,000 500 Coes
P
100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0.20 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 10
-5
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
-3 -2
SINGLE PULSE 10
-4
10 10 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
1.0
210
FMAX, OPERATING FREQUENCY (kHz)
0.0090806 0.0046253
100
0.0192963 Junction temp. ( "C) Power (Watts) 0.0658343
0.0021766
50
0.0142175
0.1055619
0.345873
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
10 10 20
Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
2-2004 050-7434 Rev B
TJ - TC R JC
TYPICAL PERFORMANCE CURVES
APT50GP60B_S
APT30DF60
10%
Gate Voltage TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
10%
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
VTEST
TJ = 125 C
*DRIVER SAME TYPE AS D.U.T.
td(off)
A
tf
Collector Voltage
V CE IC 100uH V CLAMP
0
90%
B
Switching Energy
10%
Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-247 Package Outline
Collector (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
1.04 (.041) 1.15 (.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
2-2004
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev B
Gate Collector Emitter
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads are Plated
050-7434
Emitter Collector Gate Dimensions in Millimeters and (Inches) Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.

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